wpmd2008 order information part number part number shipping wpmd2008-6 / tr dfn 6 3000tape&reel description the wpmd2008 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in dc-dc conversion applications. standard product wpmd2008 is pb-free. features z lowest rds(on) solution in 2x2 mm package z 1.8 v rds(on) rating for operation at low voltage gate drive logic level z low profile (< 0.8 mm) for easy fit in thin environments z bidirectional current flow with common source configuration z dfn6 package provides exposed drain pad for excellent thermal conduction application z optimized for battery and load management applications in portable equipment z li ion battery charging and protection circuits z high power management in portable, battery powered products z high side load switch 9 % 5 ' 6 6 5 ' 6 r q 0 $ ; 20 v 110m ? @ 4.5v 138m ? @ 2.5v pin connections wlsi eyww marking diagram e = specific device code yww = date code dual p-channel, -20 v, - .1a, power mosfet 4 1 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings (t a =25c unless otherwise specified) a: surface mounted on fr4 board using 1 in sq pad size, 2 oz cu. b: surface mounted on fr4 board using the minimum pad size, 2oz cu. thermal resistance ratings c: surface mounted on fr4 board using 1 in sq pad size, 2 oz cu. d: surface mounted on fr4 board using the minimum pad size, 2oz cu. parameter symbol value units v ds drain-source voltage -20 v v gs gate-source voltage 8 v i d continuous drain current a steady-state t a =25 -3 a steady-state t a =85 -2.3 t ? 5s t a =25 -4.1 p d steady-state t a =25 1.45 w t ? a 5s 2.3 i d continuous drain current b steady-state t a =25 -2.0 a t a =85 -1.5 p d powe r dissipation b t a =25 0.7 w i dm pulse drain current b t p =10us -20 a t j operating junction temperature range -55~150 tstg storage temperature range parameter symbol max unit junction to ambient-stead y state c r ja 86 /w junction to ambient - t ? 5 c r ja 54 /w junction to ambient-steady state min pad d r ja 175 /w wpmd2008 2 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics mosfet electrical characteristics t q c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain to source breakdown vo l t a g e bv dss v gs =0v,i d = 250 ua 20 v zero gate voltage drain current i dss v ds = 16 v, v gs =0v t j = 25c 1 ua t j = 85c 10 gate to source leakage current i gss v ds =0v,v gs = 8.0 v 100 na on characteristics gate threshold voltage v gs(th) v gs =v ds ,i d = 250 ua 0.4 0.6 1v drain to source on resistance r ds(on) v gs = 4.5v, i d = 2.0a m ? v gs = 2.5, i d = 2.0a forwar d transconductance g fs v ds = 10 v, i d = 2.7a 7.0 s charges, capacitances and gate resistance input capacitance c iss v gs =0v,f=1.0mhz,v ds = 15 v 480 pf output capacitance c oss 46 reverse transfer capacitance c rss 10 total gate charge q g(tot) vg s = 4.5 v, v ds = 6v,i d = 2.8 a 7.2 nc threshold gate charge q g(th) 2.2 gate to source charge q gs 2.2 gate to drain charge q gd 1.2 gate resistance r g 8.8 ? switching characteristics turn on delay time td(on) v gs = 4.5 v, v ds = 6.0 v, i d =-2.8a, r g =6 ? 38 ns rise time tr 25 turn off delay time td(off) 43 fall time tf 5 drain source diode characteristics forward recovery voltage v sd v gs =0v,i s = 1.0 a t j = 25c 0.7 v 90 110 115 138 wpmd2008 3 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical performance characteristi c s wpmd2008 4 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
wpmd2008 5 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
wpmd2008 6 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
power dissipation characteristics 1. the package of wpm d 200 8 is dfn2x2-6l, surface mounted on fr4 board using 1 in sq pad size 2ozcu r ja is 84 /w, surface mounted on fr4 board using minimum pad size 2ozcu r ja is 175 /w. 2. the power dissipation pd is based on tj(max)=150c, and the relation between tj and pd is tj = ta + r ja* pd , the maximum power dissipation is determined by r ja . 3. the r ja is the thermal impedance from junction to ambient, using larger pcb pad size can get smaller r ja and result in larger maximum power dissipation. wpmd2008 7 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
dfn 6 package outline dimension packa g in g information wpmd2008 8 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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